IXT(Y,A,P)1R6N50D2 دیتاشیت

IXT(Y,A,P)1R6N50D2

مشخصات دیتاشیت

نام دیتاشیت IXT(Y,A,P)1R6N50D2
حجم فایل 351.037 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت IXT(Y,A,P)1R6N50D2

دانلود دیتاشیت

سایر مستندات

IXTY1R6N50D2 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTY1R6N50D2
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 100W
  • Total Gate Charge (Qg@Vgs): 23.7nC@5V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 645pF@25V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3Ω@0V,800mA
  • Package: TO-252
  • Manufacturer: IXYS
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 100W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • detail: N-Channel 500V 1.6A (Tc) 100W (Tc) Surface Mount TO-252, (D-Pak)

محصولات مشابه